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Meiyong Liao received his doctor of Materials Science at the Institute for Semiconductors, Chinese Academy of Science (Beijing, China) 2002. For two years he was a visiting researcher at Kyoto University, Japan. Then, he joined the Diamond Research Group at the National Institute for Materials Science, Tsukuba in 2004. Presently, he works as a principal researcher at NIMS on the topics of semiconducting diamond growth, device physics, and applications. He developed the world-record DUV diamond
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Ultra-wide Bandgap Semiconductor Materials

Meiyong Liao , Bo Shen , Zhanguo Wang

Elsevier

2019-06-18

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Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials...

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